Чип светодиода на эпитаксиальной подложке GaN-GaN диаметром 2 дюйма произведенный методом металлоорганического химического осаждения (MOCVD) - купить

Купить GaN-GaN Epitaxial Wafer-LED Chip-MOCVD-2 Inch |

Brand NameNoneMeasurement unitpiece/piecesEach pack19 450,88 ₽-6%9 450,88 ₽-6%8 883,76 ₽8 883,76 ₽Add to CartBuy now8 883,76 ₽loaderDescription modname=ckeditor

The product specifications: diameter 2" × 0.4mm, crystal direction: <0001>, that is, c-axis, accept size customization.
This product is a GaN epitaxial wafer grown on sapphire (Al2O3) single crystal. It is used for making LED chips and conducting scientific experiments using MOCVD technology.
We offer high performance sapphire substrates and epitaxial wafers, and can be processed to different sizes and shapes according to your requirements to ensure excellent performance: strong adhesion, less defects, uniform and compact.
Basic parameters of GaN:
Ra is on the order of 0.5 nanometers;
Thickness: 3-5um; the company can provide four kinds of gallium nitride components: N type (doped with Si), P type (doped with Mg), I (undoped), Q (quantum well structure);
Dislocation density: 10th order of magnitude / cm2;
Carrier concentration: 10 to the power of 17 to 18 times / cc;
Resistance: 0.005 ohm.cm-1.

The basic situation of the sapphire substrate used is as follows:
Material High Purity Single Crystal Al2O3
Orientation C face (0001) ± 0.3 °
Offset angle to the M axis 0.20 ± 0.05°
Deviation from the A axis 0.0 ± 0.1°
Dismeter 50.8±0.15mm
Thickness 430μm±15μm
Total thickness deviation TTV <10μm
Surface total flatness TIR ≦10μm
WARP ≦15μm
BOW -10 ~ 0μm
Primary Flat Location A side (11-20)
Flat Off-set Angle 0.0 ± 0.2°
Primary Flat Length 16±0.5mm
Frontside Surface Roughness RA≦3 (ie Ra≦0.3nm)
Backside Surface Roughness (Ra) Ra=0.5~1.0μm

 

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